Hafnium disulfide
| Names | |
|---|---|
| IUPAC name Hafnium disulfide | |
| Identifiers | |
| 3D model (JSmol) | |
| ChemSpider | |
| ECHA InfoCard | 100.038.738 | 
| PubChem CID | |
| CompTox Dashboard (EPA) | |
| 
 | |
| 
 | |
| Properties | |
| HfS2 | |
| Molar mass | 246.62 g/mol | 
| Appearance | Brown solid | 
| Density | 6.03 g/cm3 | 
| Band gap | ~1.8 eV (indirect) | 
| Structure | |
| hP3, P3m1, No 164 | |
| a = 0.363 nm, c = 0.584 nm | |
| Formula units (Z) | 1 | 
| Related compounds | |
| Other anions | Hafnium dioxide | 
| Other cations | Tungsten disulfide Molybdenum disulfide | 
| Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references | |
Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.