Indium gallium aluminium nitride

Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth methods such as metalorganic chemical vapour deposition (MOCVD). This material is used for specialist opto-electronics applications, including laser diodes and LEDs with wavelengths from the UV to green regions of the optical spectrum.

This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.