Gallium arsenide
GaAs wafer of (100) orientation | |
| Names | |
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| Preferred IUPAC name
Gallium arsenide | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.013.741 |
| EC Number |
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| MeSH | gallium+arsenide |
PubChem CID |
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| RTECS number |
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| UNII | |
| UN number | 1557 |
CompTox Dashboard (EPA) |
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| Properties | |
| GaAs | |
| Molar mass | 144.645 g/mol |
| Appearance | Gray crystals |
| Odor | garlic-like when moistened |
| Density | 5.3176 g/cm3 |
| Melting point | 1,238 °C (2,260 °F; 1,511 K) |
| insoluble | |
| Solubility | soluble in HCl insoluble in ethanol, methanol, acetone |
| Band gap | 1.424 eV (at 300 K) |
| Electron mobility | 9000 cm2/(V·s) (at 300 K) |
| −16.2×10−6 cgs | |
| Thermal conductivity | 0.56 W/(cm·K) (at 300 K) |
Refractive index (nD) |
3.3 |
| Structure | |
| Zinc blende | |
| T2d-F-43m | |
a = 565.315 pm | |
| Tetrahedral | |
| Linear | |
| Hazards | |
| GHS labelling: | |
| Danger | |
| H350, H360F, H372 | |
| P261, P273, P301+P310, P311, P501 | |
| NFPA 704 (fire diamond) | |
| Safety data sheet (SDS) | External MSDS |
| Related compounds | |
Other anions |
Gallium nitride Gallium phosphide Gallium antimonide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references | |
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.