Tunnel diode

A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today.

Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Å) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or less aligned with valence band hole states on the P-side. They are usually made from germanium, but can also be made from gallium arsenide, gallium antimonide (GaSb) and silicon materials.